Технічний опис TPC8407,LQ(S Toshiba
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP, Part Status: Obsolete.
Інші пропозиції TPC8407,LQ(S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TPC8407,LQ(S | Виробник : Toshiba |
 Trans MOSFET N/P-CH Si 30V 9A/7.4A 8-Pin SOP T/R |
товару немає в наявності |
|
 |
TPC8407,LQ(S | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Part Status: Obsolete |
товару немає в наявності |