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| 8+ | 44.22 грн |
| 10+ | 38.17 грн |
| 100+ | 22.64 грн |
| 500+ | 18.92 грн |
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Технічний опис TPCC8093,L1Q Toshiba
Description: MOSFET N-CH 20V 21A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 500µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V.
Інші пропозиції TPCC8093,L1Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TPCC8093,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 21A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
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