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Технічний опис TPCC8093,L1Q Toshiba
Description: MOSFET N-CH 20V 21A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 500µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V.
Інші пропозиції TPCC8093,L1Q
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TPCC8093,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 21A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TPCC8093,L1Q | Toshiba |
 Trans MOSFET N-CH Si 20V 21A 8-Pin TSON EP Advance |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| TPCC8093,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TPCC8093,L1Q |
|
Виробник: Toshiba
Trans MOSFET N-CH Si 20V 21A 8-Pin TSON EP Advance
Trans MOSFET N-CH Si 20V 21A 8-Pin TSON EP Advance
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.