| Кількість | Ціна без ПДВ |
|---|---|
| 398+ | 35.31 грн |
| 400+ | 35.12 грн |
| 500+ | 28.57 грн |
| 1000+ | 25.74 грн |
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Технічний опис TPCC8105,L1Q(CM Toshiba
Description: MOSFET P-CH 30V 23A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції TPCC8105,L1Q(CM
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TPCC8105,L1Q(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 23A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. |
| TPCC8105,L1Q(CM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.