| Кількість | Ціна |
|---|---|
| 2+ | 219.88 грн |
| 10+ | 140.72 грн |
| 100+ | 90.02 грн |
| 500+ | 75.25 грн |
| 1000+ | 70.26 грн |
| 5000+ | 59.21 грн |
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Технічний опис TPH1100CQ5,LQ Toshiba
Description: 150V UMOS10-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V, Power Dissipation (Max): 3W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 800µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V.
Інші пропозиції TPH1100CQ5,LQ за ціною від 64.47 грн до 224.69 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| TPH1100CQ5,LQ | Toshiba Semiconductor and Storage |
 Description: 150V UMOS10-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V Power Dissipation (Max): 3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 800µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TPH1100CQ5,LQ | Toshiba Semiconductor and Storage |
Description: 150V UMOS10-H SOP ADVANCE Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-SOP Advance (5x5.75) Vgs(th) (Max) @ Id: 4.5V @ 800µA Power Dissipation (Max): 3W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TPH1100CQ5,LQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: 150V UMOS10-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Description: 150V UMOS10-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 68.81 грн |
| TPH1100CQ5,LQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: 150V UMOS10-H SOP ADVANCE
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 150V UMOS10-H SOP ADVANCE
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.69 грн |
| 10+ | 140.64 грн |
| 25+ | 120.92 грн |
| 100+ | 92.58 грн |
| 250+ | 82.41 грн |
| 500+ | 76.21 грн |
| 1000+ | 69.88 грн |
| 2500+ | 64.47 грн |