TPH14006NH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 73.66 грн |
10+ | 57.79 грн |
100+ | 44.95 грн |
500+ | 35.75 грн |
1000+ | 29.12 грн |
2000+ | 27.42 грн |
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Технічний опис TPH14006NH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V, Power Dissipation (Max): 1.6W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.
Інші пропозиції TPH14006NH,L1Q за ціною від 26.9 грн до 78.67 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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TPH14006NH,L1Q | Виробник : Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET |
на замовлення 3781 шт: термін постачання 21-30 дні (днів) |
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TPH14006NH,L1Q | Виробник : Toshiba | Trans MOSFET N-CH Si 60V 34A 8-Pin SOP Advance T/R |
товар відсутній |
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TPH14006NH,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 60V 14A 8-SOP ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товар відсутній |