TPH1400ANH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 5000+ | 36.51 грн |
Відгуки про товар
Написати відгук
Технічний опис TPH1400ANH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V, Power Dissipation (Max): 1.6W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V.
Інші пропозиції TPH1400ANH,L1Q за ціною від 33.76 грн до 147.95 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPH1400ANH,L1Q | Toshiba |
MOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC |
на замовлення 5958 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
TPH1400ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 24A 8-SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
на замовлення 14651 шт: термін постачання 21-31 дні (днів) |
|
| TPH1400ANH,L1Q |
|
Виробник: Toshiba
MOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC
MOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC
на замовлення 5958 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.58 грн |
| 10+ | 90.58 грн |
| 100+ | 52.96 грн |
| 500+ | 42.13 грн |
| 1000+ | 39.66 грн |
| 2500+ | 36.01 грн |
| 5000+ | 33.76 грн |
| TPH1400ANH,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
на замовлення 14651 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.95 грн |
| 10+ | 90.97 грн |
| 100+ | 61.50 грн |
| 500+ | 45.86 грн |
| 1000+ | 42.05 грн |
| 2000+ | 40.39 грн |