TPH1R405PL,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 155.86 грн |
| 10+ | 96.07 грн |
| 100+ | 64.93 грн |
| 500+ | 48.53 грн |
| 1000+ | 44.54 грн |
| 2000+ | 41.18 грн |
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Технічний опис TPH1R405PL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V.
Інші пропозиції TPH1R405PL,L1Q
| Фото | Назва | Виробник | Інформація |
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TPH1R405PL,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 120A 8SOP Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V |
товару немає в наявності |
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TPH1R405PL,L1Q | Виробник : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
товару немає в наявності |