TPH1R712MD,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 44.75 грн |
| 10000+ | 40.97 грн |
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Технічний опис TPH1R712MD,L1Q Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V.
Інші пропозиції TPH1R712MD,L1Q за ціною від 47.06 грн до 165.42 грн
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TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
на замовлення 28063 шт: термін постачання 21-31 дні (днів) |
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TPH1R712MD,L1Q | Toshiba |
MOSFETs P-Channel Mosfet 20V UMOS-VI |
на замовлення 1506 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TPH1R712MD,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
на замовлення 28063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.42 грн |
| 10+ | 102.08 грн |
| 100+ | 69.42 грн |
| 500+ | 52.04 грн |
| 1000+ | 47.82 грн |
| 2000+ | 47.06 грн |
| TPH1R712MD,L1Q |
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Виробник: Toshiba
MOSFETs P-Channel Mosfet 20V UMOS-VI
MOSFETs P-Channel Mosfet 20V UMOS-VI
на замовлення 1506 шт:
термін постачання 21-30 дні (днів)