TPH2010FNH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 200µA
| Кількість | Ціна |
|---|---|
| 5000+ | 43.02 грн |
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Технічний опис TPH2010FNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 200µA.
Інші пропозиції TPH2010FNH,L1Q за ціною від 40.72 грн до 163.27 грн
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TPH2010FNH,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 5.6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V |
на замовлення 8823 шт: термін постачання 21-31 дні (днів) |
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TPH2010FNH,L1Q | Виробник : Toshiba |
MOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV |
на замовлення 4997 шт: термін постачання 21-30 дні (днів) |
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