TPH2R903PL,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.86 грн |
| 10+ | 62.15 грн |
| 100+ | 41.28 грн |
| 500+ | 30.34 грн |
| 1000+ | 27.64 грн |
| 2000+ | 26.31 грн |
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Технічний опис TPH2R903PL,L1Q Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 81W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.
Інші пропозиції TPH2R903PL,L1Q
| Фото | Назва | Виробник | Інформація |
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TPH2R903PL,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 81W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
товару немає в наявності |
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TPH2R903PL,L1Q | Виробник : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
товару немає в наявності |