TPH3R704PC,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 82A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.4V @ 300µA, Power Dissipation (Max): 830mW (Ta), 90W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).