TPH4R008NH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
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Технічний опис TPH4R008NH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 1mA, Vgs (Max): ±20V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel.
Інші пропозиції TPH4R008NH,L1Q за ціною від 92.01 грн до 250.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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TPH4R008NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 60A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-SOP Advance (5x5) |
на замовлення 10959 шт: термін постачання 21-31 дні (днів) |
|
| TPH4R008NH,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP Advance (5x5)
на замовлення 10959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.93 грн |
| 10+ | 158.18 грн |
| 100+ | 110.81 грн |
| 500+ | 92.01 грн |