| Кількість | Ціна |
|---|---|
| 5+ | 68.43 грн |
| 10+ | 53.78 грн |
| 100+ | 39.94 грн |
| 500+ | 37.84 грн |
| 1000+ | 35.30 грн |
| 2500+ | 34.74 грн |
| 5000+ | 30.38 грн |
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Технічний опис TPH4R008QM,LQ Toshiba
Description: POWER MOSFET TRANSISTOR SOP8-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 600µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V.
Інші пропозиції TPH4R008QM,LQ за ціною від 35.89 грн до 135.29 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TPH4R008QM,LQ | Toshiba Semiconductor and Storage |
 Description: POWER MOSFET TRANSISTOR SOP8-ADVPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 600µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V |
на замовлення 4307 шт: термін постачання 21-31 дні (днів) |
|
| TPH4R008QM,LQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
на замовлення 4307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.29 грн |
| 10+ | 83.04 грн |
| 100+ | 55.86 грн |
| 500+ | 41.52 грн |
| 1000+ | 38.01 грн |
| 2000+ | 35.89 грн |