TPH5900CNH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 27.25 грн |
Відгуки про товар
Написати відгук
Технічний опис TPH5900CNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPH5900CNH,L1Q за ціною від 22.93 грн до 96.81 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TPH5900CNH,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 150V 9A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 6458 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
TPH5900CNH,L1Q | Виробник : Toshiba |
MOSFETs UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV |
на замовлення 5575 шт: термін постачання 21-30 дні (днів) |
|