TPH5R906NH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис TPH5R906NH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 300µA, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPH5R906NH,L1Q за ціною від 47.70 грн до 175.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TPH5R906NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 28A 8SOP Vgs(th) (Max) @ Id: 4V @ 300µA Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) |
на замовлення 24969 шт: термін постачання 21-31 дні (днів) |
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TPH5R906NH,L1Q | Toshiba |
MOSFETs U-MOSVIII-H 60V 71A 38nC MOSFET |
на замовлення 4008 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TPH5R906NH,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 60V 28A 8SOP
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
на замовлення 24969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.50 грн |
| 10+ | 108.81 грн |
| 100+ | 74.31 грн |
| 500+ | 55.89 грн |
| 1000+ | 51.44 грн |
| 2000+ | 47.70 грн |
| TPH5R906NH,L1Q |
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Виробник: Toshiba
MOSFETs U-MOSVIII-H 60V 71A 38nC MOSFET
MOSFETs U-MOSVIII-H 60V 71A 38nC MOSFET
на замовлення 4008 шт:
термін постачання 21-30 дні (днів)