TPH6400ENH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 5000+ | 52.61 грн |
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Технічний опис TPH6400ENH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 13A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції TPH6400ENH,L1Q за ціною від 48.24 грн до 185.43 грн
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TPH6400ENH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 200V 13A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 4V @ 300µA Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 13235 шт: термін постачання 21-31 дні (днів) |
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TPH6400ENH,L1Q | Toshiba |
MOSFETs X35PBF Power MOSFET Trans VGS10VVDS200V |
на замовлення 7092 шт: термін постачання 21-30 дні (днів) |
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| TPH6400ENH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 13A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 13A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 13235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.40 грн |
| 10+ | 109.71 грн |
| 100+ | 75.57 грн |
| 500+ | 57.26 грн |
| 1000+ | 50.66 грн |
| 2000+ | 48.87 грн |
| TPH6400ENH,L1Q |
|
Виробник: Toshiba
MOSFETs X35PBF Power MOSFET Trans VGS10VVDS200V
MOSFETs X35PBF Power MOSFET Trans VGS10VVDS200V
на замовлення 7092 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.43 грн |
| 10+ | 118.08 грн |
| 100+ | 70.18 грн |
| 500+ | 55.98 грн |
| 1000+ | 51.62 грн |
| 2500+ | 50.85 грн |
| 5000+ | 48.24 грн |