TPH6R30ANL,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 28.59 грн |
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Технічний опис TPH6R30ANL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Power Dissipation (Max): 2.5W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPH6R30ANL,L1Q за ціною від 26.16 грн до 115.51 грн
| Фото | Назва | Виробник | Інформація |
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TPH6R30ANL,L1Q | Виробник : Toshiba |
MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET |
на замовлення 13527 шт: термін постачання 21-30 дні (днів) |
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TPH6R30ANL,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 66A/45A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 2.5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 8047 шт: термін постачання 21-31 дні (днів) |
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