на замовлення 4990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 63.86 грн |
| 10+ | 55.08 грн |
| 100+ | 33.18 грн |
| 250+ | 32.37 грн |
| 500+ | 26.85 грн |
| 1000+ | 23.54 грн |
| 2500+ | 21.04 грн |
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Технічний опис TPH8R808QM,LQ Toshiba
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), 109W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V.
Інші пропозиції TPH8R808QM,LQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TPH8R808QM,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
товару немає в наявності |
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| TPH8R808QM,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
товару немає в наявності |