TPH8R80ANH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
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Технічний опис TPH8R80ANH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V.
Інші пропозиції TPH8R80ANH,L1Q за ціною від 48.58 грн до 123.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 32A 8-SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
на замовлення 29260 шт: термін постачання 21-31 дні (днів) |
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TPH8R80ANH,L1Q | Toshiba |
MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC |
на замовлення 8833 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TPH8R80ANH,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 29260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.93 грн |
| 10+ | 97.32 грн |
| 100+ | 69.06 грн |
| 500+ | 55.09 грн |
| 1000+ | 49.84 грн |
| 2000+ | 48.58 грн |
| TPH8R80ANH,L1Q |
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Виробник: Toshiba
MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
на замовлення 8833 шт:
термін постачання 21-30 дні (днів)