на замовлення 6906 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 180.43 грн |
| 10+ | 114.77 грн |
| 100+ | 67.50 грн |
| 500+ | 53.94 грн |
| 1000+ | 52.42 грн |
| 5000+ | 43.58 грн |
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Технічний опис TPHR9003NL1,LQ Toshiba
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Power Dissipation (Max): 800mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V.
Інші пропозиції TPHR9003NL1,LQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TPHR9003NL1,LQ | Виробник : Toshiba |
 Trans MOSFET N-CH Si 30V 320A 8-Pin SOP Advance(N) T/R |
товару немає в наявності |
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TPHR9003NL1,LQ | Виробник : Toshiba |
Trans MOSFET N-CH Si 30V 320A 8-Pin SOP Advance(N) T/R |
товару немає в наявності |
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TPHR9003NL1,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
товару немає в наявності |
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TPHR9003NL1,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
товару немає в наявності |