TPN11003NL,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис TPN11003NL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Power Dissipation (Max): 700mW (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPN11003NL,LQ за ціною від 18.71 грн до 93.53 грн
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TPN11003NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 11A 8TSON-ADV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
на замовлення 5779 шт: термін постачання 21-31 дні (днів) |
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TPN11003NL,LQ | Toshiba |
MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V |
на замовлення 3391 шт: термін постачання 21-30 дні (днів) |
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| TPN11003NL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.86 грн |
| 10+ | 50.82 грн |
| 100+ | 33.46 грн |
| 500+ | 24.41 грн |
| 1000+ | 22.16 грн |
| TPN11003NL,LQ |
|
Виробник: Toshiba
MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V
MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V
на замовлення 3391 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.53 грн |
| 10+ | 57.42 грн |
| 100+ | 32.91 грн |
| 500+ | 25.60 грн |
| 1000+ | 23.14 грн |
| 3000+ | 20.18 грн |
| 6000+ | 18.71 грн |