TPN11006PL,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.65 грн |
| 6000+ | 17.50 грн |
| 9000+ | 16.77 грн |
| 15000+ | 15.51 грн |
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Технічний опис TPN11006PL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 610mW (Ta), 61W (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPN11006PL,LQ за ціною від 17.44 грн до 82.87 грн
| Фото | Назва | Виробник | Інформація |
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TPN11006PL,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 22730 шт: термін постачання 21-31 дні (днів) |
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TPN11006PL,LQ | Виробник : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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