TPN1110ENH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
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Технічний опис TPN1110ENH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V.
Інші пропозиції TPN1110ENH,L1Q за ціною від 42.23 грн до 157.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TPN1110ENH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 200V 7.2A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 700mW (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 29788 шт: термін постачання 21-31 дні (днів) |
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TPN1110ENH,L1Q | Toshiba |
MOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TPN1110ENH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 7.2A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 29788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.02 грн |
| 10+ | 97.69 грн |
| 100+ | 66.34 грн |
| 500+ | 49.68 грн |
| 1000+ | 43.91 грн |
| 2000+ | 42.23 грн |
| TPN1110ENH,L1Q |
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Виробник: Toshiba
MOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV
MOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)