TPN4R806PL,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 23.02 грн |
Відгуки про товар
Написати відгук
Технічний опис TPN4R806PL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPN4R806PL,L1Q за ціною від 20.39 грн до 96.52 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPN4R806PL,L1Q | Виробник : Toshiba |
MOSFETs TSON N-CH 60V 72A |
на замовлення 4605 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
TPN4R806PL,L1Q | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSON Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V |
на замовлення 9228 шт: термін постачання 21-31 дні (днів) |
|