TPN6R003NL,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 2956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.77 грн |
| 10+ | 48.96 грн |
| 100+ | 38.06 грн |
| 500+ | 30.28 грн |
| 1000+ | 24.66 грн |
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Технічний опис TPN6R003NL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V, Power Dissipation (Max): 700mW (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.
Інші пропозиції TPN6R003NL,LQ
| Фото | Назва | Виробник | Інформація |
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TPN6R003NL,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 27A 8TSON-ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V Power Dissipation (Max): 700mW (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
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TPN6R003NL,LQ | Виробник : Toshiba |
MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V |
товару немає в наявності |