TPW4R50ANH,L1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис TPW4R50ANH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A 8DSOP, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPW4R50ANH,L1Q за ціною від 75.08 грн до 250.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TPW4R50ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 92A 8DSOP Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 800mW (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 11854 шт: термін постачання 21-31 дні (днів) |
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TPW4R50ANH,L1Q | Toshiba |
MOSFETs N-CH Mosfet 60V N-CH Mosfet 100V |
на замовлення 4918 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TPW4R50ANH,L1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A 8DSOP
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET N-CH 100V 92A 8DSOP
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 11854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.16 грн |
| 10+ | 156.99 грн |
| 100+ | 109.46 грн |
| 500+ | 83.68 грн |
| 1000+ | 77.56 грн |
| 2000+ | 75.08 грн |
| TPW4R50ANH,L1Q |
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Виробник: Toshiba
MOSFETs N-CH Mosfet 60V N-CH Mosfet 100V
MOSFETs N-CH Mosfet 60V N-CH Mosfet 100V
на замовлення 4918 шт:
термін постачання 21-30 дні (днів)