TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 5000+ | 61.54 грн |
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Технічний опис TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції TPWR7904PB,L1XHQ за ціною від 55.98 грн до 202.54 грн
| Фото | Назва | Виробник | Інформація |
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TPWR7904PB,L1XHQ | Виробник : Toshiba |
MOSFETs 170W 1MHz Automotive; AEC-Q101 |
на замовлення 9354 шт: термін постачання 21-30 дні (днів) |
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TPWR7904PB,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOP Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 6809 шт: термін постачання 21-31 дні (днів) |
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