TRS10E65F,S1Q Toshiba

Description: DIODE SIL CARB 650V 10A TO220-2L, Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 36pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max).