| Кількість | Ціна |
|---|---|
| 1+ | 580.89 грн |
| 10+ | 479.59 грн |
| 120+ | 378.35 грн |
| 510+ | 372.73 грн |
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Технічний опис TRS10N120HB,S1Q Toshiba
Description: DIODE ARRAY SIC 1200V 18A TO-247, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 18A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції TRS10N120HB,S1Q за ціною від 415.92 грн до 655.08 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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TRS10N120HB,S1Q | Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 1200V 18A TO-247Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
|
| TRS10N120HB,S1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 18A TO-247
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 1200V 18A TO-247
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 655.08 грн |
| 30+ | 415.92 грн |