TRS12A65F,S1Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: DIODE SIL CARB 650V 12A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 44pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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Технічний опис TRS12A65F,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A TO220F2L, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 44pF @ 650V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220F-2L, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Інші пропозиції TRS12A65F,S1Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TRS12A65F,S1Q | Виробник : Toshiba |
SiC Schottky Diodes RECT 650V 12A RDL SIC SKY |
товару немає в наявності |