Технічний опис TRS16N65FB,S1Q Toshiba
Description: DIODE ARRAY SIC 650V 8A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 8A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції TRS16N65FB,S1Q
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TRS16N65FB,S1Q | Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 650V 8A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TRS16N65FB,S1Q | Toshiba |
Rectifier Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| TRS16N65FB,S1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| TRS16N65FB,S1Q |
|
Виробник: Toshiba
Rectifier Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube
Rectifier Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.