| Кількість | Ціна |
|---|---|
| 3+ | 160.49 грн |
| 10+ | 133.30 грн |
| 100+ | 99.16 грн |
| 500+ | 83.79 грн |
| 1000+ | 67.52 грн |
| 5000+ | 65.85 грн |
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Технічний опис TRS4E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 4A TO220-2L, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 16pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції TRS4E65F,S1Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TRS4E65F,S1Q | Виробник : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 4A TO220-2LCurrent - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 16pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
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