| Кількість | Ціна |
|---|---|
| 2+ | 197.73 грн |
| 10+ | 194.10 грн |
| 50+ | 90.72 грн |
| 500+ | 73.84 грн |
| 1000+ | 66.95 грн |
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Технічний опис TRS4E65H,S1Q Toshiba
Description: G3 SIC-SBD 650V 4A TO-220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 263pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A, Current - Reverse Leakage @ Vr: 55 µA @ 650 V.
Інші пропозиції TRS4E65H,S1Q за ціною від 104.63 грн до 150.32 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| TRS4E65H,S1Q | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 4A TO-220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 263pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A Current - Reverse Leakage @ Vr: 55 µA @ 650 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
|
| TRS4E65H,S1Q |
Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.32 грн |
| 10+ | 130.20 грн |
| 100+ | 104.63 грн |