| Кількість | Ціна |
|---|---|
| 2+ | 240.40 грн |
| 10+ | 177.92 грн |
| 25+ | 152.61 грн |
| 50+ | 125.88 грн |
| 100+ | 113.93 грн |
| 250+ | 109.00 грн |
| 500+ | 90.72 грн |
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Технічний опис TRS6E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 6A TO220-2L, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції TRS6E65F,S1Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TRS6E65F,S1Q | Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 6A TO220-2LCurrent - Reverse Leakage @ Vr: 30 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 22pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| TRS6E65F,S1Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 6A TO220-2L
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 6A TO220-2L
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.