TTC008(Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 285 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.89 грн |
| 10+ | 53.89 грн |
| 100+ | 41.29 грн |
Відгуки про товар
Написати відгук
Технічний опис TTC008(Q) Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2, Power - Max: 1.1 W, Voltage - Collector Emitter Breakdown (Max): 285 V, Current - Collector (Ic) (Max): 1.5 A, Part Status: Active, Supplier Device Package: PW-MOLD2, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
