TTC015B,Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A TO-126N
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-126N
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tray
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.28 грн |
| 10+ | 41.66 грн |
| 250+ | 23.45 грн |
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Технічний опис TTC015B,Q Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A TO-126N, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 2 A, Part Status: Active, Supplier Device Package: TO-126N, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Tray.
