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Технічний опис TW060N120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247 60MO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.2mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V.
Інші пропозиції TW060N120C,S1F за ціною від 1029.49 грн до 1676.76 грн
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TW060N120C,S1F | Виробник : Toshiba Semiconductor and Storage |
 Description: G3 1200V SIC-MOSFET TO-247 60MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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