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| 10+ | 1494.56 грн |
| 30+ | 922.67 грн |
| 120+ | 907.90 грн |
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Технічний опис TW060Z120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247-4L 6, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.2mA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V.
Інші пропозиції TW060Z120C,S1F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TW060Z120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247-4L 6 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.2mA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. |
| TW060Z120C,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 6
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247-4L 6
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.