Технічний опис TW083Z65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247-4L 83, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 5V @ 600µA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V.
Інші пропозиції TW083Z65C,S1F за ціною від 636.75 грн до 945.19 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||
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| TW083Z65C,S1F | Виробник : Toshiba Semiconductor and Storage |
 Description: G3 650V SIC-MOSFET TO-247-4L 83Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 5V @ 600µA Supplier Device Package: TO-247-4L(X) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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