U1GWJ49(TE12L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A PW-MINI
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: PW-MINI
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис U1GWJ49(TE12L,F) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A PW-MINI, Current - Reverse Leakage @ Vr: 500 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: -40°C ~ 125°C, Supplier Device Package: PW-MINI, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції U1GWJ49(TE12L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| U1GWJ49(TE12L,F) | Виробник : Toshiba |
Schottky Diodes & Rectifiers X35 Pb-F DIODE PW-MINI MOQ=1000 V=40 I=1A F=60HZ |
товару немає в наявності |