Технічний опис ULN2803APG,CN Toshiba
Description: TRANS 8NPN DARL 50V 0.5A 18DIP, Packaging: Tube, Package / Case: 18-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 8 NPN Darlington, Operating Temperature: -40°C ~ 85°C (TA), Power - Max: 1.47W, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 18-DIP, Part Status: Obsolete.
Інші пропозиції ULN2803APG,CN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ULN2803APG,CN | Виробник : Toshiba |
 Trans Darlington NPN 50V 0.5A 1470mW 18-Pin PDIP |
товар відсутній |
|
 |
ULN2803APG,CN | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS 8NPN DARL 50V 0.5A 18DIP Packaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 8 NPN Darlington Operating Temperature: -40°C ~ 85°C (TA) Power - Max: 1.47W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 18-DIP Part Status: Obsolete |
товар відсутній |