UMB4NTN ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.94 грн |
| 14+ | 23.90 грн |
| 100+ | 11.74 грн |
| 1000+ | 5.94 грн |
| 3000+ | 4.76 грн |
| 9000+ | 4.07 грн |
| 24000+ | 3.87 грн |
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Технічний опис UMB4NTN ROHM Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: UMT6.