VS-1EFH01HM3/I Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 13+ | 25.55 грн |
| 20+ | 16.63 грн |
| 100+ | 10.19 грн |
| 500+ | 7.65 грн |
| 1000+ | 5.92 грн |
| 5000+ | 5.23 грн |
| 10000+ | 3.93 грн |
Відгуки про товар
Написати відгук
Технічний опис VS-1EFH01HM3/I Vishay Semiconductors
Description: DIODE GEN PURP 100V 1A DO219AB, Reverse Recovery Time (trr): 16 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Technology: Standard.
Інші пропозиції VS-1EFH01HM3/I за ціною від 5.73 грн до 27.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VS-1EFH01HM3/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 1A DO219ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 16 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 9190 шт: термін постачання 21-31 дні (днів) |
|
| VS-1EFH01HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.12 грн |
| 18+ | 17.46 грн |
| 100+ | 9.93 грн |
| 500+ | 7.80 грн |
| 1000+ | 6.68 грн |
| 2000+ | 6.25 грн |
| 5000+ | 5.73 грн |