на замовлення 4988 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 161.83 грн |
| 10+ | 102.12 грн |
| 25+ | 75.59 грн |
| 100+ | 60.69 грн |
| 250+ | 55.34 грн |
| 500+ | 48.44 грн |
| 1000+ | 44.47 грн |
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Технічний опис XPH1R104PS,L1XHQ Toshiba
Description: 40V UMOS9-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Power Dissipation (Max): 3W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції XPH1R104PS,L1XHQ за ціною від 40.67 грн до 169.10 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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| XPH1R104PS,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
 Description: 40V UMOS9-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| XPH1R104PS,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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