XPH1R104PS,L1XHQ Toshiba Semiconductor and Storage

Description: 40V UMOS9-H SOP ADVANCE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 3W (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).