XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 45A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).