XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 34.81 грн |
Відгуки про товар
Написати відгук
Технічний опис XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Power Dissipation (Max): 840mW (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції XPN3R804NC,L1XHQ за ціною від 24.33 грн до 133.71 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
XPN3R804NC,L1XHQ | Виробник : Toshiba |
MOSFETs 100W 1MHz Automotive; AEC-Q101 |
на замовлення 8156 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
XPN3R804NC,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 40A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 840mW (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 14885 шт: термін постачання 21-31 дні (днів) |
|