XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Відгуки про товар
Написати відгук
Технічний опис XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 840mW (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel.
Інші пропозиції XPN7R104NC,L1XHQ за ціною від 32.66 грн до 127.01 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
XPN7R104NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 840mW (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 11842 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
XPN7R104NC,L1XHQ | Toshiba |
MOSFETs 65W 1MHz Automotive; AEC-Q101 |
на замовлення 2537 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| XPN7R104NC,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 20A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 11842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.01 грн |
| 10+ | 77.83 грн |
| 100+ | 52.25 грн |
| 500+ | 38.75 грн |
| 1000+ | 35.44 грн |
| 2000+ | 32.66 грн |
| XPN7R104NC,L1XHQ |
|
Виробник: Toshiba
MOSFETs 65W 1MHz Automotive; AEC-Q101
MOSFETs 65W 1MHz Automotive; AEC-Q101
на замовлення 2537 шт:
термін постачання 21-30 дні (днів)