XPN9R614MC,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 32.55 грн |
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Технічний опис XPN9R614MC,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V, Power Dissipation (Max): 840mW (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 500µA, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції XPN9R614MC,L1XHQ за ціною від 30.89 грн до 91.45 грн
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XPN9R614MC,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 13147 шт: термін постачання 21-31 дні (днів) |
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XPN9R614MC,L1XHQ | Виробник : Toshiba |
MOSFET 100W 1MHz Automotive; AEC-Q101 |
на замовлення 17383 шт: термін постачання 21-30 дні (днів) |
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