| Кількість | Ціна |
|---|---|
| 1+ | 382.34 грн |
| 10+ | 310.56 грн |
| 100+ | 250.36 грн |
| 1500+ | 218.71 грн |
Відгуки про товар
Написати відгук
Технічний опис XPQR8308QB,LXHQ Toshiba
Description: 80V UMOS10 L-TOGL 0.83MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Ta), Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.2mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції XPQR8308QB,LXHQ за ціною від 157.33 грн до 449.38 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
XPQR8308QB,LXHQ | Toshiba Semiconductor and Storage |
 Description: 80V UMOS10 L-TOGL 0.83MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1052 шт: термін постачання 21-31 дні (днів) |
|
| XPQR8308QB,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1052 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.38 грн |
| 10+ | 284.48 грн |
| 25+ | 245.90 грн |
| 100+ | 189.80 грн |
| 250+ | 169.70 грн |
| 500+ | 157.33 грн |