XPQR8308QB,LXHQ Toshiba Semiconductor and Storage

Description: 80V UMOS10 L-TOGL 0.83MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Ta), Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.2mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V, Qualification: AEC-Q101.