XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 2+ | 212.03 грн |
| 10+ | 132.34 грн |
| 100+ | 91.55 грн |
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Технічний опис XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 170W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції XPW4R10ANB,L1XHQ за ціною від 58.79 грн до 214.96 грн
| Фото | Назва | Виробник | Інформація |
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XPW4R10ANB,L1XHQ | Виробник : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ |
на замовлення 4790 шт: термін постачання 21-30 дні (днів) |
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